发明授权
US07846757B2 Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
有权
用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
- 专利标题： Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
- 专利标题（中）： 用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
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申请号： US11444946申请日： 2006-06-01
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公开(公告)号： US07846757B2公开(公告)日： 2010-12-07
- 发明人: Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland JP Kawaguchi, Saitama Prefecture
- 专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人地址： US CA Oakland JP Kawaguchi, Saitama Prefecture
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L27/15
摘要：
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
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