发明授权
- 专利标题： Diamond film formation method and film formation jig thereof
- 专利标题（中）： 金刚石成膜方法及其成膜夹具
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申请号： US11674354申请日： 2007-02-13
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公开(公告)号： US07846766B2公开(公告)日： 2010-12-07
- 发明人: Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
- 申请人： Hiroaki Yoshida , Isamu Yanase , Tomio Ono , Naoshi Sakuma , Mariko Suzuki , Tadashi Sakai
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-069496 20060314
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
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