发明授权
- 专利标题： Contact barrier layer deposition process
- 专利标题（中）： 接触阻挡层沉积工艺
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申请号： US11950319申请日： 2007-12-04
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公开(公告)号： US07846835B2公开(公告)日： 2010-12-07
- 发明人: Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人： Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人地址： TW
- 专利权人： Macronix International Co. Ltd.
- 当前专利权人： Macronix International Co. Ltd.
- 当前专利权人地址： TW
- 代理机构： Baker & McKenzie LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for depositing a barrier layer onto a substrate is disclosed. A layer of titanium (Ti) is deposited onto the substrate using an ionized metal plasma (IMP) physical vapor deposition process. The IMP process includes: generating gaseous ions, accelerating the gaseous ions towards a titanium target, sputtering the titanium atoms from the titanium target with the gaseous ions, ionizing the titanium atoms using a plasma, and depositing the ionized titanium atoms onto the substrate to form the layer of Ti. A first layer of titanium nitride (TiN) is deposited onto the layer of Ti using a metal organic chemical vapor deposition (MOCVD) process. A second layer of TiN is deposited onto the first layer of TiN using a thermal chemical vapor deposition process. The newly completed barrier layer is annealed in the presence of nitrogen at a temperature of between about 500° C. to about 750° C.
公开/授权文献
- US20080132061A1 CONTACT BARRIER LAYER DEPOSITION PROCESS 公开/授权日：2008-06-05
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