Invention Grant
US07846846B2 Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
失效
通过处理形成在开口侧壁上的聚合物来防止在高纵横比开口中的蚀刻轮廓弯曲和弯曲的方法
- Patent Title: Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
- Patent Title (中): 通过处理形成在开口侧壁上的聚合物来防止在高纵横比开口中的蚀刻轮廓弯曲和弯曲的方法
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Application No.: US11861032Application Date: 2007-09-25
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Publication No.: US07846846B2Publication Date: 2010-12-07
- Inventor: Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
- Applicant: Kallol Bera , Kenny L. Doan , Stephan Wege , Subhash Deshmukh
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Law Office of Robert M. Wallace
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment carried out periodically during the etch process.
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