发明授权
US07851135B2 Method of forming an etching mask pattern from developed negative and positive photoresist layers
失效
从显影的负性和正性光致抗蚀剂层形成蚀刻掩模图案的方法
- 专利标题： Method of forming an etching mask pattern from developed negative and positive photoresist layers
- 专利标题（中）： 从显影的负性和正性光致抗蚀剂层形成蚀刻掩模图案的方法
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申请号： US11948631申请日： 2007-11-30
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公开(公告)号： US07851135B2公开(公告)日： 2010-12-14
- 发明人: Woo Yung Jung , Guee Hwang Sim
- 申请人： Woo Yung Jung , Guee Hwang Sim
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/40
摘要：
The present invention relates to a method of forming an etching mask pattern from developed negative and positive photoresist layers. According to the present invention, a negative photoresist layer is formed over a substrate. Some regions of the negative photoresist layer are exposed, thereby generating hydrogen ions within the exposed negative photoresist regions. The negative photoresist layer is developed so that the exposed negative photoresist regions remain. A positive photoresist layer is formed over the substrate including the remaining negative photoresist regions. The substrate is baked so that hydrogen ions within the remaining negative photoresist regions are diffused into the positive photoresist layer at boundary portions adjacent to the remaining negative photoresist regions. The positive photoresist layer is developed to remove the positive photoresist portions into which the hydrogen ions are diffused.
公开/授权文献
- US20090142711A1 METHOD OF FORMING MASK PATTERN 公开/授权日：2009-06-04
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