发明授权
- 专利标题： Semiconductor fin integration using a sacrificial fin
- 专利标题（中）： 半导体翅片集成使用牺牲鳍
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申请号： US11678322申请日： 2007-02-23
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公开(公告)号： US07851340B2公开(公告)日： 2010-12-14
- 发明人: Rickey S. Brownson , Robert E. Jones
- 申请人： Rickey S. Brownson , Robert E. Jones
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 James L. Clingan, Jr.; Robert A. Rodriguez
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763
摘要：
There is a method for forming a semiconductor device. Portions of a sacrificial layer are removed to expose a first seed layer region. The first seed layer region corresponds to a first semiconductor region, and a remaining portion of the sacrificial layer corresponds to a second semiconductor region. An epitaxial semiconductor material is deposited over the first seed layer region. A capping layer is formed to overlie the epitaxial semiconductor material and the remaining portion of the sacrificial layer. Portions of the capping layer are removed to form a capping structure that overlies a part of the remaining portion of the sacrificial layer. Portions of the sacrificial layer not covered by the capping structure are removed to form a sacrificial structure having sidewalls. Fin structures are formed adjoining the sidewalls by depositing a semiconductor material along the sidewalls. Portions of the capping structure are removed to expose portions of sacrificial layer between adjacent fin structures. Portions of the sacrificial material between the adjacent fin structures are removed.
公开/授权文献
- US20080206933A1 SEMICONDUCTOR FIN INTEGRATION USING A SACRIFICIAL FIN 公开/授权日：2008-08-28
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