发明授权
US07851384B2 Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film
失效
通过使用双层膜来减轻UV和电子束暴露对半导体器件膜性质的影响的方法
- 专利标题： Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film
- 专利标题（中）： 通过使用双层膜来减轻UV和电子束暴露对半导体器件膜性质的影响的方法
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申请号： US11751516申请日： 2007-05-21
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公开(公告)号： US07851384B2公开(公告)日： 2010-12-14
- 发明人: Yijun Liu , Huiwen Xu , Li-Qun Xia , Chad Peterson , Hichem M'Saad
- 申请人： Yijun Liu , Huiwen Xu , Li-Qun Xia , Chad Peterson , Hichem M'Saad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.
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