发明授权
- 专利标题： Wide band gap semiconductor templates
- 专利标题（中）： 宽带隙半导体模板
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申请号： US11707611申请日： 2007-02-15
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公开(公告)号： US07851412B2公开(公告)日： 2010-12-14
- 发明人: Paul N. Arendt , Liliana Stan , Quanxi Jia , Raymond F. DePaula , Igor O. Usov
- 申请人： Paul N. Arendt , Liliana Stan , Quanxi Jia , Raymond F. DePaula , Igor O. Usov
- 申请人地址： US NM Los Alamos
- 专利权人： Los Alamos National Security, LLC
- 当前专利权人： Los Alamos National Security, LLC
- 当前专利权人地址： US NM Los Alamos
- 代理商 Holly L. Teeter; Bruce H. Cottrell; Juliet A. Jones
- 主分类号： H01L39/24
- IPC分类号： H01L39/24 ; H01B1/00 ; H01B1/02 ; B32B9/00
摘要：
The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
公开/授权文献
- US20080197327A1 Wide band gap semiconductor templates 公开/授权日：2008-08-21
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