发明授权
- 专利标题： Nonvolatile memory and fabrication method thereof
- 专利标题（中）： 非挥发性记忆及其制造方法
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申请号： US11723547申请日： 2007-03-20
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公开(公告)号： US07851888B2公开(公告)日： 2010-12-14
- 发明人: Tseung-Yuen Tseng , Chun-Chieh Lin , Chao-Cheng Lin
- 申请人： Tseung-Yuen Tseng , Chun-Chieh Lin , Chao-Cheng Lin
- 申请人地址： TW Hsinchu
- 专利权人： Winbond Electronics Corp.
- 当前专利权人： Winbond Electronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 优先权： TW96101235A 20070112
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L27/02
摘要：
Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3 film is disposed over the metal layer. A resistor layer comprising a SrZrO3 film is disposed on the buffer layer. A top electrode is disposed on the resistor layer.
公开/授权文献
- US20080169458A1 Nonvolatile memory and fabrication method thereof 公开/授权日：2008-07-17
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