Invention Grant
- Patent Title: Nonvolatile memory and fabrication method thereof
- Patent Title (中): 非挥发性记忆及其制造方法
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Application No.: US11723547Application Date: 2007-03-20
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Publication No.: US07851888B2Publication Date: 2010-12-14
- Inventor: Tseung-Yuen Tseng , Chun-Chieh Lin , Chao-Cheng Lin
- Applicant: Tseung-Yuen Tseng , Chun-Chieh Lin , Chao-Cheng Lin
- Applicant Address: TW Hsinchu
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW96101235A 20070112
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/02
Abstract:
Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3 film is disposed over the metal layer. A resistor layer comprising a SrZrO3 film is disposed on the buffer layer. A top electrode is disposed on the resistor layer.
Public/Granted literature
- US20080169458A1 Nonvolatile memory and fabrication method thereof Public/Granted day:2008-07-17
Information query
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