The magnitude of an amplitude waveform of an electromagnetic wave generated when irradiating a pulse laser beam to a structure A including diffusion regions provided in the structure of a semiconductor device to be inspected is compared with the magnitude of an amplitude waveform of an electromagnetic wave radiated when irradiating the pulse laser beam to a structure A of a reference device measured in advance, and the detection sensitivity of the electromagnetic wave is corrected (S14). Thereafter, measurement errors caused by variations in the detection sensitivity of electromagnetic waves of an inspecting apparatus are eliminated by inspecting the semiconductor device as an inspection target, so that the quality of the semiconductor device is precisely determined (S16).