发明授权
- 专利标题： Multiple write configurations for a memory cell
- 专利标题（中）： 存储单元的多个写入配置
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申请号： US11771747申请日： 2007-06-29
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公开(公告)号： US07852657B2公开(公告)日： 2010-12-14
- 发明人: Thomas Happ , Jan Boris Philipp
- 申请人： Thomas Happ , Jan Boris Philipp
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Eschweiler & Associates, LLC
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
The present invention relates to a method of programming an array of memory cells such as phase change memory cells. In this method, a selection is made between a first pulse configuration and a second pulse configuration, wherein the first and second pulse configurations are different, and wherein each pulse configuration can write at least two data states to the memory cells of the array.
公开/授权文献
- US20090003034A1 MULTIPLE WRITE CONFIGURATIONS FOR A MEMORY CELL 公开/授权日：2009-01-01