发明授权
- 专利标题: Phase change memory cell with constriction structure
- 专利标题(中): 具有收缩结构的相变记忆体
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申请号: US12049056申请日: 2008-03-14
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公开(公告)号: US07852658B2公开(公告)日: 2010-12-14
- 发明人: Jun Liu , Michael P. Violette
- 申请人: Jun Liu , Michael P. Violette
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman, Lundberg & Woessner, P.A.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Some embodiments include apparatus and methods having a memory cell with a first electrode and a second electrode, and a memory element directly contacting the first and second electrodes. The memory element may include a programmable portion having a material configured to change between multiple phases. The programmable portion may be isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element.
公开/授权文献
- US20090231911A1 PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE 公开/授权日:2009-09-17
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