发明授权
- 专利标题: Capacitor unit and method of forming the same
- 专利标题(中): 电容器单元及其形成方法
-
申请号: US12106830申请日: 2008-04-21
-
公开(公告)号: US07855431B2公开(公告)日: 2010-12-21
- 发明人: Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-Hong Kim
- 申请人: Jung-Min Park , Seok-Jun Won , Min-Woo Song , Weon-Hong Kim
- 申请人地址: KR Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si, Gyeonggi-Do
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2007-0040611 20070426
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
A capacitor unit includes a first capacitor and a second capacitor. The first capacitor includes a first lower electrode, a first dielectric layer pattern and a first upper electrode sequentially stacked. The first capacitor includes a first control layer pattern for controlling a voltage coefficient of capacitance (VCC) of the first capacitor between the first lower electrode and the first dielectric layer pattern. The second capacitor includes a second lower electrode, a second dielectric layer pattern and a second upper electrode sequentially stacked. The second lower electrode is electrically connected to the first upper electrode, and the second upper electrode is electrically connected to the second lower electrode. The second capacitor includes a second control layer pattern for controlling a VCC of the second capacitor between the second lower electrode and the second dielectric layer pattern.
公开/授权文献
- US20080265371A1 Capacitor Unit and Method of Forming the Same 公开/授权日:2008-10-30
信息查询
IPC分类: