发明授权
US07855932B2 Low power word line control circuits with boosted voltage output for semiconductor memory
有权
具有升压电压输出的半导体存储器的低功率字线控制电路
- 专利标题： Low power word line control circuits with boosted voltage output for semiconductor memory
- 专利标题（中）： 具有升压电压输出的半导体存储器的低功率字线控制电路
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申请号： US11264041申请日： 2005-10-31
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公开(公告)号： US07855932B2公开(公告)日： 2010-12-21
- 发明人: Chung-Cheng Chou , Chien-Hua Huang , Hau-Tai Shieh , Tsai-Hsin Lai
- 申请人： Chung-Cheng Chou , Chien-Hua Huang , Hau-Tai Shieh , Tsai-Hsin Lai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A word line control device has a word line driver for deactivating and activating a word line to control access to a memory cell, and a voltage coupling device for coupling voltages to the word line driver. The word line control device maintains boosted voltages and has significantly reduced leakage currents and power consumption in the active and standby modes.
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