Invention Grant
US07856156B2 Lithium niobate modulator having a doped semiconductor structure for the mitigation of DC bias drift 有权
铌酸锂调制器具有用于减轻直流偏置漂移的掺杂半导体结构

Lithium niobate modulator having a doped semiconductor structure for the mitigation of DC bias drift
Abstract:
There is provided in one of the embodiments of the disclosure a lithium niobate modulator structure for mitigating DC bias drift comprising a highly doped semiconductor layer patterned above an optical waveguide having one or more DC sections and an RF section, wherein a metal layer or contact is in contact with a portion of the semiconductor layer and a buffer layer is deposited in the RF section. There is provided in another embodiment of the disclosure a method for making a lithium niobate electro-optical modulator for mitigation of DC bias drift.
Information query
Patent Agency Ranking
0/0