Invention Grant
US07856156B2 Lithium niobate modulator having a doped semiconductor structure for the mitigation of DC bias drift
有权
铌酸锂调制器具有用于减轻直流偏置漂移的掺杂半导体结构
- Patent Title: Lithium niobate modulator having a doped semiconductor structure for the mitigation of DC bias drift
- Patent Title (中): 铌酸锂调制器具有用于减轻直流偏置漂移的掺杂半导体结构
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Application No.: US12196936Application Date: 2008-08-22
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Publication No.: US07856156B2Publication Date: 2010-12-21
- Inventor: Keyvan Sayyah , Robert R. Hayes
- Applicant: Keyvan Sayyah , Robert R. Hayes
- Applicant Address: US IL Chicago
- Assignee: The Boeing Company
- Current Assignee: The Boeing Company
- Current Assignee Address: US IL Chicago
- Main IPC: G02F1/035
- IPC: G02F1/035 ; G02F1/01 ; G02F1/03 ; G02F1/07

Abstract:
There is provided in one of the embodiments of the disclosure a lithium niobate modulator structure for mitigating DC bias drift comprising a highly doped semiconductor layer patterned above an optical waveguide having one or more DC sections and an RF section, wherein a metal layer or contact is in contact with a portion of the semiconductor layer and a buffer layer is deposited in the RF section. There is provided in another embodiment of the disclosure a method for making a lithium niobate electro-optical modulator for mitigation of DC bias drift.
Public/Granted literature
- US20100046878A1 LITHIUM NIOBATE MODULATOR HAVING A DOPED SEMICONDUCTOR STRUCTURE FOR THE MITIGATION OF DC BIAS DRIFT Public/Granted day:2010-02-25
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