Invention Grant
- Patent Title: Growth of single crystal nanowires
- Patent Title (中): 单晶纳米线的生长
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Application No.: US12004276Application Date: 2007-12-20
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Publication No.: US07858181B2Publication Date: 2010-12-28
- Inventor: Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
- Applicant: Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
- Applicant Address: US TX Austin
- Assignee: Brian A. Korgel
- Current Assignee: Brian A. Korgel
- Current Assignee Address: US TX Austin
- Agency: Fortkort & Houston P.C.
- Agent John A. Fortkort
- Main IPC: C30B29/00
- IPC: C30B29/00 ; C30B25/00
Abstract:
The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.
Public/Granted literature
- US20080248304A1 Growth of single crystal nanowires Public/Granted day:2008-10-09
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