Invention Grant
- Patent Title: Merged P-i-N Schottky structure
- Patent Title (中): 合并的P-i-N肖特基结构
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Application No.: US11402039Application Date: 2006-04-11
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Publication No.: US07858456B2Publication Date: 2010-12-28
- Inventor: Davide Chiola , Kohji Andoh , Silvestro Fimiani
- Applicant: Davide Chiola , Kohji Andoh , Silvestro Fimiani
- Applicant Address: SG Singapore
- Assignee: Siliconix Technology C. V.
- Current Assignee: Siliconix Technology C. V.
- Current Assignee Address: SG Singapore
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.
Public/Granted literature
- US20060189107A1 Merged P-i-N Schottky structure Public/Granted day:2006-08-24
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