发明授权
US07858500B2 Low threshold voltage semiconductor device with dual threshold voltage control means
有权
具有双阈值电压控制装置的低阈值电压半导体器件
- 专利标题： Low threshold voltage semiconductor device with dual threshold voltage control means
- 专利标题（中）： 具有双阈值电压控制装置的低阈值电压半导体器件
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申请号： US12062972申请日： 2008-04-04
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公开(公告)号： US07858500B2公开(公告)日： 2010-12-28
- 发明人: Eduard A. Cartier , Matthew W. Copel , Martin M. Frank , Evgeni P. Gousev , Paul C. Jamison , Rajarao Jammy , Barry P. Linder , Vijay Narayanan
- 申请人： Eduard A. Cartier , Matthew W. Copel , Martin M. Frank , Evgeni P. Gousev , Paul C. Jamison , Rajarao Jammy , Barry P. Linder , Vijay Narayanan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/479
- IPC分类号： H01L21/479
摘要：
A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiO2 and a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning by material stack engineering is provided. The other means contemplated in the present invention include, for example, utilizing an insulating interlayer atop the dielectric for charge fixing and/or by forming an engineered channel region. The present invention also relates to a method of fabricating such a CMOS structure.
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