发明授权
- 专利标题： Method for reducing carbon monoxide poisoning in a thin film deposition system
- 专利标题（中）： 降低薄膜沉积系统中一氧化碳中毒的方法
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申请号： US11277919申请日： 2006-03-29
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公开(公告)号： US07858522B2公开(公告)日： 2010-12-28
- 发明人: Kenji Suzuki , Atsushi Gomi
- 申请人： Kenji Suzuki , Atsushi Gomi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Wood, Herron & Evans, LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method for introducing a precursor vapor to a process chamber configured for forming a thin film on a substrate is described. The method includes transporting a process gas containing metal precursor vapor and a CO delivery gas to a process chamber, and introducing a CO saturation gas to the precursor vapor in the process chamber and optionally adjusting the spatial distribution of the CO saturation gas addition in order to affect improvements to the properties of the deposited film.