发明授权
US07858524B2 Method of manufacturing semiconductor device with silicide gate electrodes
有权
制造具有硅化物栅电极的半导体器件的方法
- 专利标题： Method of manufacturing semiconductor device with silicide gate electrodes
- 专利标题（中）： 制造具有硅化物栅电极的半导体器件的方法
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申请号： US11600794申请日： 2006-11-17
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公开(公告)号： US07858524B2公开(公告)日： 2010-12-28
- 发明人: Tomonori Aoyama
- 申请人： Tomonori Aoyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-346464 20051130
- 主分类号： H01L21/441
- IPC分类号： H01L21/441
摘要：
A semiconductor device includes a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a silicide gate electrode of an n-type MISFET formed on the gate insulation film; and a silicide gate electrode of a p-type MISFET formed on the gate insulation film and having a thickness smaller than that of the silicide gate electrode of the n-type MISFET, the silicide gate electrode of the p-type MISFET having a ratio of metal content higher than that of the silicide gate electrode of the n-type MISFET.
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