Invention Grant
- Patent Title: Switching power supply device, semiconductor intergrated circuit device and power supply device
- Patent Title (中): 开关电源装置，半导体集成电路装置和电源装置
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Application No.: US12216733Application Date: 2008-07-10
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Publication No.: US07859326B2Publication Date: 2010-12-28
- Inventor: Toshio Nagasawa , Ryotaro Kudo
- Applicant: Toshio Nagasawa , Ryotaro Kudo
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, P.C.
- Priority: JP2005-323832 20051108; JP2006-005512 20060113; JP2006-231129 20060828
- Main IPC: H01J19/82
- IPC: H01J19/82
Abstract:
A switching power supply device performs a stable operation with fast response for a semiconductor integrated circuit device. A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction.
Public/Granted literature
- US20090015220A1 Switching power supply device, semiconductor intergrated circuit device and power supply device Public/Granted day:2009-01-15
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