发明授权
US07859745B2 Semiconductor optical amplifying device, semiconductor optical amplifying system and semiconductor optical integrated element 有权
半导体光放大装置,半导体光放大系统及半导体光集成元件

Semiconductor optical amplifying device, semiconductor optical amplifying system and semiconductor optical integrated element
摘要:
A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain applied thereto and a well layer made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, here, four layers of the well layer and five layers of the barrier layer are alternately laminated, is proposed.
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