公开(公告)号：US07508849B2

公开(公告)日：2009-03-24

申请号：US11020241

申请日：2004-12-27

Applicant: Shinsuke Tanaka ,  Ken Morito

Inventor： Shinsuke Tanaka ,  Ken Morito

IPC: H01S3/10 ,  H01S3/13 ,  H01S3/00 ,  H01S3/04

CPC classification number: H01S5/141 ,  G02B5/284 ,  H01S3/1068 ,  H01S5/0612 ,  H01S5/0687 ,  H01S5/1071 ,  H01S5/142

Abstract: A semiconductor optical amplifier, an acousto-optic tunable filter, a phase shifter, a lens, and an internal etalon are arranged in a resonator. Outside the resonator, two lenses, two beam splitters, two photo-detectors, and an external etalon are arranged. The internal etalon is a quartz etalon and the external etalon is a crystal etalon. Therefore, the rate of change in transmission peak wavelength of the internal etalon to a temperature change is greater than that of the external etalon.

Abstract translation: 谐振器中布置有半导体光放大器，声光可调滤波器，移相器，透镜和内标准器。 在谐振器外部，布置了两个透镜，两个分束器，两个光电检测器和外部标准具。 内部标准具是石英标准具，外部标准具是一种水晶标准具。 因此，内部标准具的透射峰值波长与温度变化的变化率大于外部标准具的变化率。

公开(公告)号：US20080308788A1

公开(公告)日：2008-12-18

申请号：US12047806

申请日：2008-03-13

Applicant: Hiroji EBE ,  Kenichi KAWAGUCHI ,  Ken MORITO ,  Yasuhiko ARAKAWA

Inventor： Hiroji EBE ,  Kenichi KAWAGUCHI ,  Ken MORITO ,  Yasuhiko ARAKAWA

IPC: H01L29/06

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/5009 ,  H01S2301/04 ,  Y10S438/962

Abstract: A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.

Abstract translation: 量子点半导体器件包括具有多个量子点层的有源层，每个量子点层包括通过堆叠多个量子点形成的复合量子点和与复合量子点的侧面接触形成的侧面阻挡层。 每个量子点层形成的量子点的堆叠数量和侧面阻挡层的应变幅度被设定为使得有源层的增益谱具有对应于 增益谱在所需的工作温度范围内。

公开(公告)号：US20080199128A1

公开(公告)日：2008-08-21

申请号：US12071007

申请日：2008-02-14

Applicant: Shinsuke Tanaka ,  Ken Morito

Inventor： Shinsuke Tanaka ,  Ken Morito

IPC: G02B6/12

CPC classification number: G02B6/125 ,  G02B6/2821

Abstract: Aiming at realizing a semiconductor integrated optical element comprising a single semiconductor substrate, and first and second optical waveguides differed in the equivalent refractive index from each other on the semiconductor substrate, allowing light signal to propagate from the first optical waveguide to the second optical waveguide, in which the first and second optical waveguides are provided side-by-side on the semiconductor substrate to form a directional coupler allowing optical coupling between the first and second optical waveguides, and a first-guiding-mode optical signal in the first optical waveguide is output after being converted into a second-guiding-mode optical signal in second optical waveguide, which makes possible to suppress generation of reflection loss and emission loss in optical coupling, and obtain extremely desirable optical coupling characteristics, without causing reflection of optical signal, between different types of optical waveguides differed from each other in the equivalent refractive index.

Abstract translation: 为了实现包括单个半导体衬底和第一和第二光波导的半导体集成光学元件在半导体衬底上的等效折射率彼此不同，允许光信号从第一光波导传播到第二光波导， 其中所述第一和第二光波导在所述半导体衬底上并排设置以形成允许所述第一和第二光波导之间的光耦合的定向耦合器，并且所述第一光波导中的第一引导模式光信号是 在第二光波导中被转换为第二引导模式光信号之后，输出可以抑制光耦合中的反射损耗和发射损耗的产生，并且获得非常期望的光耦合特性，而不引起光信号的反射 不同类型的光波导与e不同 ach其他在等效折射率。

公开(公告)号：US07112827B2

公开(公告)日：2006-09-26

申请号：US10690469

申请日：2003-10-22

Applicant: Akinori Hayakawa ,  Yoshihiro Sato ,  Ken Morito ,  Norihiko Sekine

Inventor： Akinori Hayakawa ,  Yoshihiro Sato ,  Ken Morito ,  Norihiko Sekine

IPC: H01L29/74 ,  H01L31/111 ,  H01S3/10 ,  H01S3/17

CPC classification number: H01S5/0607 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/2206 ,  H01S5/227 ,  H01S5/32333 ,  H01S5/4012 ,  H01S5/4087 ,  H01S2301/173

Abstract: A light oscillation part including an active layer for generating light by current injection, a tuning layer with an intermediate layer formed between the active layer and the tuning layer, for varying an oscillation wavelength by current injection and a diffraction grating formed near the active layer and the tuning layer, and a light amplification part including an active layer for amplifying light by current injection are formed on a semiconductor substrate. Light oscillation elements having wide wavelength variation ranges and the light amplification are integrated on a semiconductor substrate, whereby wide wavelength variation ranges can be obtained and the output light can be much increased.

Abstract translation: 一种光振荡部分，包括通过电流注入产生光的有源层，在有源层和调谐层之间形成中间层的调谐层，用于通过电流注入改变振荡波长，以及在有源层附近形成衍射光栅; 调谐层和包括用于通过电流注入来放大光的有源层的光放大部分形成在半导体衬底上。 具有宽波长变化范围的光振荡元件和光放大集成在半导体衬底上，由此可以获得宽的波长变化范围，并且输出光可以大大增加。

公开(公告)号：US06487007B1

公开(公告)日：2002-11-26

申请号：US09585323

申请日：2000-06-02

Applicant: Ken Morito

Inventor： Ken Morito

IPC: H01S325

CPC classification number: H01S5/5009 ,  H01S5/028 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/3201

Abstract: A polarization independent-type semiconductor optical amplifier comprises: a strained bulk active layer having a 20 nm to 90 nm-thick and having a tensile strain of a −0.10% to −0.60% strain amount; clad layers provided, sandwiching the strained bulk active layer; and a resonance suppressing means for suppressing resonance of light due to reflection on a light incident end face and a light exit end face of the strained bulk active layer, incident signal light entering at the light incident end face being amplified and exiting at the light exit end face, and an individual transmission gain of the exit signal light being substantially constant independent of a polarization state of the incident signal light. Whereby drastically increased fiber out saturation powers can be obtained with polarization independence retained.

Abstract translation: 偏振无关型半导体光放大器包括：具有20nm至90nm厚并且具有-0.10％至-0.60％应变量的拉伸应变的应变体活性层; 提供包覆层，夹持应变体活性层; 以及谐振抑制装置，用于抑制由于在受光体积活性层的光入射端面和光出射端面上的反射引起的光的共振，入射在光入射端面的入射信号光在光出射处被放大和离开 端面，并且出射信号光的单独透射增益基本上恒定，而与入射信号光的偏振状态无关。 由此可以在保持极化独立性的情况下获得明显增加的光纤饱和功率。

公开(公告)号：US08073033B2

公开(公告)日：2011-12-06

申请号：US12617637

申请日：2009-11-12

Applicant: Akinori Hayakawa ,  Ken Morito

Inventor： Akinori Hayakawa ,  Ken Morito

IPC: H01S5/00

CPC classification number: H01S5/06256 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/06206 ,  H01S5/06258 ,  H01S5/4031 ,  H01S5/50

Abstract: Objects are achieved by an optical semiconductor device comprising: a structure 61 including a substrate 50, a diffraction grating 52a, an active layer 54 and a refractive index control layer 60; and an laser element 100 including an electrode 92a for the active layer, an electrode 92b for the refractive index control layer and an electrode 92c for switching, wherein a pre-bias current is previously supplied from the electrode 92a for the active layer to the active layer 54 in a state where a switching current is not supplied from the electrode 92c for switching to the active layer 54, and then while a current Idrive for activation is supplied from the electrode 92a for the active layer to the active layer 54, the laser element 100 is turned on by supplying the switching current Isw from the electrode 92c for switching to a part of the active layer 54, as well as turning off the laser element 100 by halting the supply of the switching current Isw.

Abstract translation: 目标通过光学半导体器件实现，包括：包括衬底50，衍射光栅52a，有源层54和折射率控制层60的结构61; 以及激光元件100，其包括用于有源层的电极92a，用于折射率控制层的电极92b和用于切换的电极92c，其中预先从用于有源层的电极92a向活性层提供预偏置电流 在没有从用于切换到有源层54的电极92c提供开关电流的状态下，然后当从用于有源层的电极92a向活性层54提供用于激活的电流Idrive时，激光器 通过从用于切换的电极92c向有源层54的一部分提供开关电流Isw来接通元件100，并且通过停止切换电流Isw的供应来关闭激光元件100。

公开(公告)号：US20110164310A1

公开(公告)日：2011-07-07

申请号：US13048345

申请日：2011-03-15

Applicant: Shinsuke TANAKA ,  Ken MORITO

Inventor： Shinsuke TANAKA ,  Ken MORITO

IPC: H01S5/024 ,  H01S5/06

CPC classification number: H01S5/0612 ,  H01S5/0261 ,  H01S5/0617 ,  H01S5/0683 ,  H01S5/50

Abstract: An optical amplification control apparatus is formed from a semiconductor optical amplifier, a temperature adjustment unit adjusting the temperature of the semiconductor optical amplifier, and an optical gain control unit adjusting the temperature of the semiconductor optical amplifier by controlling the temperature adjustment unit, and varying an optical gain of the semiconductor optical amplifier. Thus, a pattern effect is suppressed even if the output light intensity (the intensity of amplified light) is increased.

Abstract translation: 光放大控制装置由半导体光放大器，调节半导体光放大器的温度的温度调节单元和通过控制温度调节单元来调节半导体光放大器的温度的光增益控制单元形成， 半导体光放大器的光增益。 因此，即使输出光强度（放大光的强度）增加，图案效果也被抑制。

公开(公告)号：US07859746B2

公开(公告)日：2010-12-28

申请号：US12191418

申请日：2008-08-14

Applicant: Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

Inventor： Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

IPC: H01S5/343

CPC classification number: H01S5/1082 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/32366 ,  H01S5/50 ,  H01S5/5009 ,  H01S2301/02

Abstract: A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

Abstract translation: 提供了使用InP衬底（11）作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层（14）的偏振无关的SOA。 通过这种结构，通过引入拉伸应变来实现极化独立性，并且通过降低有源层（14）的膜厚度来实现高饱和光输出功率，并且通过降低有源层（14）的带隙来增加增益峰值波长 通过使用通过将氮（N）添加到GaInAs作为有源层（14）的材料而制成的GaInNA，以便即使在带填充离开时也实现高增益，特别是在C带和L带中，有源层（14） 将高电流注入有源层（14）的时间。

公开(公告)号：US20090122393A1

公开(公告)日：2009-05-14

申请号：US12191418

申请日：2008-08-14

Applicant: Ken MORITO ,  Susumu YAMAZAKI ,  Shinsuke TANAKA

Inventor： Ken MORITO ,  Susumu YAMAZAKI ,  Shinsuke TANAKA

IPC: H01S3/06

CPC classification number: H01S5/1082 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/32366 ,  H01S5/50 ,  H01S5/5009 ,  H01S2301/02

Abstract: A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

Abstract translation: 提供了使用InP衬底（11）作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层（14）的偏振无关的SOA。 通过这种结构，通过引入拉伸应变来实现极化独立性，并且通过降低有源层（14）的膜厚度来实现高饱和光输出功率，并且通过降低有源层（14）的带隙来增加增益峰值波长 通过使用通过将氮（N）添加到GaInAs作为有源层（14）的材料而制成的GaInNA，以便即使在带填充离开时也可以实现高增益，特别是在C带和L带中，有源层（14） 将高电流注入有源层（14）的时间。

公开(公告)号：US20050063042A1

公开(公告)日：2005-03-24

申请号：US10959507

申请日：2004-10-07

Applicant: Ken Morito

Inventor： Ken Morito

IPC: H01S3/063 ,  H01S5/026 ,  H01S5/10 ,  H01S5/227 ,  H01S5/40 ,  H01S5/50 ,  H01S3/00

CPC classification number: H01S5/50 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/227 ,  H01S5/4031 ,  H01S5/5063 ,  H01S5/5072

Abstract: The optical amplifying device comprises a DFB laser 22 formed on an n type InP substrate 10, for outputting control light; a symmetrical Mach-Zehnder interferometer 12 formed on the n type InP substrate 10 and including 3 dB optical couplers 14, 16 having 2 input ports and 2 output ports, and optical waveguides 24a, 24b which optically interconnect the output port of the 3 dB optical coupler 14 and the input port of the 3 dB optical coupler 16; and SOAs 24a, 24b respectively formed in the optical waveguides 24a, 24b.

Abstract translation: 光放大装置包括：形成在n型InP基板10上的DFB激光器22，用于输出控制光; 形成在n型InP衬底10上并且包括具有2个输入端口和2个输出端口的3dB光耦合器14,16的对称的Mach-Zehnder干涉仪12以及将3dB光学器件的输出端口光学地互连的光波导24a，24b 耦合器14和3dB光耦合器16的输入端口; 以及分别形成在光波导24a，24b中的SOA 24a，24b。