A resistive memory device is provided. The resistive memory device includes word lines arranged in M rows, bit lines arranged in N columns, local source lines arranged in M/2 rows, and resistive memory cells arranged in M rows and N columns. Each of the resistive memory cells includes a resistance variable element having a first electrode connected to a corresponding bit line, and a cell transistor having a first terminal connected to a second electrode of the resistance variable element, a second terminal connected to a corresponding local source line, and a control terminal connected to a corresponding word line. The local source line is commonly connected to the second terminals of the cell transistors of the two neighboring rows.