发明授权
- 专利标题： Method for forming patterns of semiconductor device
- 专利标题（中）： 半导体器件形成方法
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申请号： US11529310申请日： 2006-09-29
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公开(公告)号： US07862988B2公开(公告)日： 2011-01-04
- 发明人: Cha-Won Koh , Yool Kang , Sang-Gyun Woo , Seok-Hwan Oh , Gi-Sung Yeo , Ji-Young Lee
- 申请人： Cha-Won Koh , Yool Kang , Sang-Gyun Woo , Seok-Hwan Oh , Gi-Sung Yeo , Ji-Young Lee
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce., P.L.C.
- 优先权： KR10-2005-0092329 20050930
- 主分类号： G03F7/26
- IPC分类号： G03F7/26
摘要：
Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.
公开/授权文献
- US20070077524A1 Method for forming patterns of semiconductor device 公开/授权日：2007-04-05