发明授权
US07863063B2 Method for fabricating a sealed cavity microstructure 有权
用于制造密封腔微结构的方法

  • 专利标题: Method for fabricating a sealed cavity microstructure
  • 专利标题(中): 用于制造密封腔微结构的方法
  • 申请号: US12042289
    申请日: 2008-03-04
  • 公开(公告)号: US07863063B2
    公开(公告)日: 2011-01-04
  • 发明人: Siew-Seong Tan
  • 申请人: Siew-Seong Tan
  • 申请人地址: TW Hsinchu
  • 专利权人: MEMSmart Semiconductor Corp.
  • 当前专利权人: MEMSmart Semiconductor Corp.
  • 当前专利权人地址: TW Hsinchu
  • 代理商 Banger Shia
  • 主分类号: H01L21/00
  • IPC分类号: H01L21/00
Method for fabricating a sealed cavity microstructure
摘要:
A method for fabricating a sealed cavity microstructure comprises the steps of: forming an insulation layer with a micro-electro-mechanical structure on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one suspended structure and at least one conductive structure between which is disposed a spacer region; after an etching, filling a sacrificial layer into the spacer region and on the surface of the conductive structure; forming holes in the sacrificial layer correspondingly to the conductive structure; depositing a cap layer into the holes and the surface; after removing the sacrificial layer, utilizing the clearance of the cap layer to carry out a further etching to realize the suspension of the micro-electro-mechanical structure; and finally, utilizing a sealing layer to achieve the sealing effect. By such arrangements, the exposure of the micro-electro-mechanical structure can be effectively prevented, and the final package cost can be reduced.
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