发明授权
- 专利标题: Method for fabricating a sealed cavity microstructure
- 专利标题(中): 用于制造密封腔微结构的方法
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申请号: US12042289申请日: 2008-03-04
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公开(公告)号: US07863063B2公开(公告)日: 2011-01-04
- 发明人: Siew-Seong Tan
- 申请人: Siew-Seong Tan
- 申请人地址: TW Hsinchu
- 专利权人: MEMSmart Semiconductor Corp.
- 当前专利权人: MEMSmart Semiconductor Corp.
- 当前专利权人地址: TW Hsinchu
- 代理商 Banger Shia
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for fabricating a sealed cavity microstructure comprises the steps of: forming an insulation layer with a micro-electro-mechanical structure on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one suspended structure and at least one conductive structure between which is disposed a spacer region; after an etching, filling a sacrificial layer into the spacer region and on the surface of the conductive structure; forming holes in the sacrificial layer correspondingly to the conductive structure; depositing a cap layer into the holes and the surface; after removing the sacrificial layer, utilizing the clearance of the cap layer to carry out a further etching to realize the suspension of the micro-electro-mechanical structure; and finally, utilizing a sealing layer to achieve the sealing effect. By such arrangements, the exposure of the micro-electro-mechanical structure can be effectively prevented, and the final package cost can be reduced.
公开/授权文献
- US20090227060A1 Method for Fabricating a Sealed Cavity Microstructure 公开/授权日:2009-09-10
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