发明授权
US07863157B2 Method and structure for fabricating solar cells using a layer transfer process
有权
使用层转移工艺制造太阳能电池的方法和结构
- 专利标题: Method and structure for fabricating solar cells using a layer transfer process
- 专利标题(中): 使用层转移工艺制造太阳能电池的方法和结构
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申请号: US11685686申请日: 2007-03-13
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公开(公告)号: US07863157B2公开(公告)日: 2011-01-04
- 发明人: Francois J. Henley , Philip James Ong
- 申请人: Francois J. Henley , Philip James Ong
- 申请人地址: US CA San Jose
- 专利权人: Silicon Genesis Corporation
- 当前专利权人: Silicon Genesis Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Townsend and Townsend and Crew LLP
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L21/46
摘要:
A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.
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