Invention Grant
- Patent Title: Diode having vertical structure and method of manufacturing the same
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Application No.: US12654894Application Date: 2010-01-07
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Publication No.: US07863638B2Publication Date: 2011-01-04
- Inventor: Myung Cheol Yoo
- Applicant: Myung Cheol Yoo
- Applicant Address: KR Seoul
- Assignee: LG Electroncis Inc.
- Current Assignee: LG Electroncis Inc.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Public/Granted literature
- US20100109020A1 Diode having vertical structure and method of manufacturing the same Public/Granted day:2010-05-06
Information query
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