公开(公告)号：US08674386B2

公开(公告)日：2014-03-18

申请号：US13074566

申请日：2011-03-29

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L21/00

CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract translation: 发光二极管包括在透明基板上的透明基板和GaN缓冲层。 在缓冲层上形成n-GaN层。 在n-GaN层上形成有源层。 在活性层上形成p-GaN层。 在p-GaN层上形成p电极，在n-GaN层上形成n电极。 在透明基板的第二面上形成反射层。 此外，AlGaN的包覆层在p-GaN层和有源层之间。

公开(公告)号：US08288787B2

公开(公告)日：2012-10-16

申请号：US12654988

申请日：2010-01-12

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/504 ,  H01L24/48 ,  H01L24/49 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/502 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract translation: 由发射第一波长的光的LED芯片和LED芯片上的薄膜层组成的发光LED器件改变发光的颜色。 例如，可以使用蓝色LED芯片来产生白光。 薄膜层有利地由诸如磷光体的荧光材料组成，和/或包括锡。 使用化学气相沉积有利地沉积薄膜层。

公开(公告)号：US08106417B2

公开(公告)日：2012-01-31

申请号：US12285557

申请日：2008-10-08

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure. A conductive bottom contact (possibly reflective) can be inserted between the second supporting structure and the semiconductor layers.

Abstract translation: 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用常规技术在绝缘基板上制造半导体层。 定义各个器件边界的沟槽通过半导体层形成，并通过电感耦合等离子体反应离子蚀刻有利地形成绝缘衬底。 第一支撑结构附接到半导体层。 然后去除硬质基底，有利的是通过激光剥离。 第二支撑结构，优选地导电，代替硬质基底，第一支撑结构被去除。 然后有利地通过蚀刻穿过第二支撑结构切割各个装置。 保护性光致抗蚀剂层可以保护半导体层免受第一支撑结构的附着。 可以在第二支撑结构和半导体层之间插入导电底部接触（可能是反射的）。

公开(公告)号：US20110220948A1

公开(公告)日：2011-09-15

申请号：US13074566

申请日：2011-03-29

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/42

CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AIGaN is between the p-GaN layer and the active layer.

Abstract translation: 发光二极管包括在透明基板上的透明基板和GaN缓冲层。 在缓冲层上形成n-GaN层。 在n-GaN层上形成有源层。 在活性层上形成p-GaN层。 在p-GaN层上形成p电极，在n-GaN层上形成n电极。 在透明基板的第二面上形成反射层。 此外，AIGaN的包层在p-GaN层和有源层之间。

公开(公告)号：US07915632B2

公开(公告)日：2011-03-29

申请号：US12840840

申请日：2010-07-21

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/325 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01S5/3013

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract translation: 发光二极管包括导电层，导电层上的n-GaN层，n-GaN层上的有源层，有源层上的p-GaN层和p-GaN层上的p电极 。 导电层是n电极。

公开(公告)号：US20100127274A1

公开(公告)日：2010-05-27

申请号：US12591165

申请日：2009-11-10

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/504 ,  H01L24/48 ,  H01L24/49 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/502 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

公开(公告)号：US07682854B2

公开(公告)日：2010-03-23

申请号：US11203322

申请日：2005-08-15

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L21/00

CPC classification number: H01L33/0075 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

公开(公告)号：US20100012956A1

公开(公告)日：2010-01-21

申请号：US12461681

申请日：2009-08-20

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract translation: 发光二极管包括在透明基板上的透明基板和GaN缓冲层。 在缓冲层上形成n-GaN层。 在n-GaN层上形成有源层。 在活性层上形成p-GaN层。 在p-GaN层上形成p电极，在n-GaN层上形成n电极。 在透明基板的第二面上形成反射层。 此外，AlGaN的包覆层在p-GaN层和有源层之间。

公开(公告)号：US07582912B2

公开(公告)日：2009-09-01

申请号：US11247225

申请日：2005-10-12

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L21/00

CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract translation: 发光二极管包括在透明基板上的透明基板和GaN缓冲层。 在缓冲层上形成n-GaN层。 在n-GaN层上形成有源层。 在活性层上形成p-GaN层。 在p-GaN层上形成p电极，在n-GaN层上形成n电极。 在透明基板的第二面上形成反射层。 此外，AlGaN的包覆层在p-GaN层和有源层之间。

公开(公告)号：US07569865B2

公开(公告)日：2009-08-04

申请号：US11002413

申请日：2004-12-03

Applicant: Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

Inventor： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.