发明授权
- 专利标题： Semiconductor apparatus and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11976161申请日： 2007-10-22
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公开(公告)号： US07863679B2公开(公告)日： 2011-01-04
- 发明人: Kei Takehara
- 申请人： Kei Takehara
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2006-287799 20061023
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A vertical power MOSFET includes a semiconductor substrate including a trench, a gate electrode layer having a prescribed impurity concentration and being formed inside the trench, and a cap insulating layer having a lower impurity concentration than the impurity concentration of the gate electrode layer and covering the gate electrode layer to provide insulation.
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