发明授权
- 专利标题： Forming conductive stud for semiconductive devices
- 专利标题（中）： 形成用于半导体器件的导电螺柱
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申请号： US12013622申请日： 2008-01-14
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公开(公告)号： US07863693B2公开(公告)日： 2011-01-04
- 发明人: Thomas W. Dyer , Sunfei Fang , Jiang Yan
- 申请人： Thomas W. Dyer , Sunfei Fang , Jiang Yan
- 申请人地址： US NY Armonk US CA Milipitas
- 专利权人： International Business Machines Corporation,Infineon Technologies North America Corp.
- 当前专利权人： International Business Machines Corporation,Infineon Technologies North America Corp.
- 当前专利权人地址： US NY Armonk US CA Milipitas
- 代理商 Yuanmin Cai
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Embodiments of the present invention provide a method of forming a conductive stud contacting a semiconductor device. The method includes forming a protective layer covering the semiconductor device; selectively etching an opening down through the protective layer reaching a contact area of the semiconductor device, the opening being away from a protected area of the semiconductor device; and filling the opening with a conductive material to form the conductive stud. One embodiment may further include forming a dielectric liner directly on top of the semiconductor device, and forming the protective layer on top of the dielectric liner. Embodiments of the present invention also provide a semiconductor device made thereof.
公开/授权文献
- US20080111202A1 FORMING CONDUCTIVE STUD FOR SEMICONDUCTIVE DEVICES 公开/授权日：2008-05-15
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