Invention Grant
- Patent Title: Heat-dissipating structure and heat-dissipating semiconductor package having the same
- Patent Title (中): 散热结构及其散热半导体封装
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Application No.: US12001612Application Date: 2007-12-11
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Publication No.: US07863731B2Publication Date: 2011-01-04
- Inventor: Chin-Te Chen , Ke-Chuan Yang , Chang-Fu Lin
- Applicant: Chin-Te Chen , Ke-Chuan Yang , Chang-Fu Lin
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Angell Palmer & Dodge LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW95146576A 20061213
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
A heat-dissipating structure and a heat-dissipating semiconductor package having the same are disclosed in the present invention. The heat-dissipating semiconductor package includes a chip carrier, a flip chip semiconductor chip attached and electrically connected to the chip carrier, and a heat sink bonded to the flip chip semiconductor chip via a thermal interface material, such as a solder material, wherein a groove is formed on the heat sink around the bonding area of the thermal interface material, and a blocking layer, such as a metal oxide layer, is formed on the surface of the groove to reduce the wetting capability of the thermal interface material, thus further prevents the thermal interface material from wetting the groove in the fusion process performed the thermal interface material, therefore, it ensures the thermal interface material has sufficient thickness for forming solder bonding between the heat sink and the flip chip semiconductor chip.
Public/Granted literature
- US20080142955A1 Heat-dissipating structure and heat-dissipating semiconductor package having the same Public/Granted day:2008-06-19
Information query
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