发明授权
- 专利标题： Ferroelectric layer with domains stabilized by strain
- 专利标题（中）： 具有由菌株稳定的结构域的铁电层
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申请号： US11958826申请日： 2007-12-18
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公开(公告)号： US07867786B2公开(公告)日： 2011-01-11
- 发明人: Qing Ma , Li-Peng Wang , Valluri Rao
- 申请人： Qing Ma , Li-Peng Wang , Valluri Rao
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/02
摘要：
The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer.
公开/授权文献
- US20090155931A1 FERROELECTRIC LAYER WITH DOMAINS STABILIZED BY STRAIN 公开/授权日：2009-06-18
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