发明授权
US07867895B2 Method of fabricating improved interconnect structure with a via gouging feature absent profile damage to the interconnect dielectric
有权
利用通孔型沟槽特征制造改进的互连结构的方法,而不对互连电介质造成损伤
- 专利标题: Method of fabricating improved interconnect structure with a via gouging feature absent profile damage to the interconnect dielectric
- 专利标题(中): 利用通孔型沟槽特征制造改进的互连结构的方法,而不对互连电介质造成损伤
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申请号: US11858166申请日: 2007-09-20
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公开(公告)号: US07867895B2公开(公告)日: 2011-01-11
- 发明人: Chih-Chao Yang , Keith Kwong Hon Wong
- 申请人: Chih-Chao Yang , Keith Kwong Hon Wong
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Wenjie Li
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
An interconnect structure including a gouging feature at the bottom of the via openings and a method of forming the same, which does not introduce either damages caused by Ar sputtering into the dielectric material that includes the via and line openings, nor plating voids into the structure are provided. The method includes the uses of at least one infusion process that forms an infused surface region within a conductive material of a lower interconnect level. The infused surface region has a different etch rate as compared with the conductive material and thus in a subsequent etching process, the infused surface region can be selectively removed forming a gouging feature within the structure.