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US07868401B2 Multibit electro-mechanical memory device having at least one cantilever electrode and at least one gate line and manufacturing method thereof 有权
具有至少一个悬臂电极和至少一个栅极线的多位机电存储器件及其制造方法

Multibit electro-mechanical memory device having at least one cantilever electrode and at least one gate line and manufacturing method thereof
摘要：
Provided are a multibit electro-mechanical memory device and a method of manufacturing the same. The device may include at least one bit line in a first direction on a substrate; at least one gate line and at least one lower word line in parallel by a given interval and in a second direction intersecting the first direction on the at least one bit line; at least one contact pad adjacent to the at least one gate line on the at least one bit line; and at least one cantilever electrode coupled to the at least one contact pad, configured to float with a void above and beneath the at least one cantilever electrode and configured to curve in a third direction vertical to the first and second directions.
摘要（中）：

提供了一种多位机电存储器件及其制造方法。 器件可以在衬底上包括沿第一方向的至少一个位线; 至少一个栅极线和至少一个下部字线平行延伸给定的间隔，并且在与所述至少一个位线上的所述第一方向相交的第二方向上; 至少一个与所述至少一条位线上的所述至少一条栅极线相邻的接触焊盘; 以及耦合到所述至少一个接触垫的至少一个悬臂电极，其构造成在所述至少一个悬臂电极的上方和下方浮动，并且被配置为在垂直于所述第一和第二方向的第三方向上弯曲。

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