发明授权
- 专利标题: Semiconductor laser device
- 专利标题(中): 半导体激光器件
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申请号: US12126365申请日: 2008-05-23
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公开(公告)号: US07869480B2公开(公告)日: 2011-01-11
- 发明人: Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
- 申请人: Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
- 申请人地址: JP Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Ditthavong Mori & Steiner, P.C.
- 优先权: JP2007-138351 20070524; JP2008-129311 20080516
- 主分类号: H01S3/04
- IPC分类号: H01S3/04
摘要:
In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
公开/授权文献
- US20080291958A1 SEMICONDUCTOR LASER DEVICE 公开/授权日:2008-11-27
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