Invention Grant
US07872713B2 Pixel structure having particular patterned dielectric layer with micro-bumps
有权
像素结构具有具有微凸块的特定图案化电介质层
- Patent Title: Pixel structure having particular patterned dielectric layer with micro-bumps
- Patent Title (中): 像素结构具有具有微凸块的特定图案化电介质层
-
Application No.: US12060275Application Date: 2008-04-01
-
Publication No.: US07872713B2Publication Date: 2011-01-18
- Inventor: Cho-Yan Chen , Seok-Lyul Lee , Tun-Chun Yang , Ching-Huan Lin , Chih-Ming Chang
- Applicant: Cho-Yan Chen , Seok-Lyul Lee , Tun-Chun Yang , Ching-Huan Lin , Chih-Ming Chang
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW96138840A 20071017
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; G02F1/1343 ; G02F1/136

Abstract:
A pixel structure disposed on a substrate and electrically connected to a scan line and a data line is provided. The pixel structure has a reflective area and includes a common line, a semiconductor lower electrode, an upper electrode, a patterned dielectric layer, a reflective electrode and an active device. The semiconductor lower electrode electrically connected to the common line is disposed on the substrate within the reflective area. The upper electrode is disposed above and electrically isolated from the semiconductor lower electrode. The patterned dielectric layer with the micro-bumps is disposed on the upper electrode and exposes a part of the upper electrode. The reflective electrode is disposed on the patterned dielectric layer and the part of the upper electrode. Besides, the reflective electrode is electrically connected to the upper electrode. The active device is electrically connected to the scan line, the data line and the reflective electrode.
Public/Granted literature
- US20090102996A1 PIXEL STRUCTURE Public/Granted day:2009-04-23
Information query
IPC分类: