发明授权
- 专利标题: System and method for lithography simulation
- 专利标题(中): 光刻模拟系统和方法
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申请号: US11527010申请日: 2006-09-26
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公开(公告)号: US07873937B2公开(公告)日: 2011-01-18
- 发明人: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- 申请人: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G06F19/00 ; G03F1/00 ; G21K5/00 ; G06K9/36
摘要:
A system has been developed for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the system accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the system employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.
公开/授权文献
- US20070022402A1 System and method for lithography simulation 公开/授权日:2007-01-25
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