发明授权
US07875492B2 Integrated circuit including a memory fabricated using self-aligned processing 有权
集成电路包括使用自对准处理制造的存储器

Integrated circuit including a memory fabricated using self-aligned processing
摘要:
An integrated circuit includes transistors in rows and columns providing an array, conductive lines in columns across the array, and resistivity changing material elements contacting the conductive lines and self-aligned to the conductive lines. The integrated circuit includes electrodes contacting the resistivity changing material elements, each electrode self-aligned to a conductive line and coupled to one side of a source-drain path of a transistor.
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