发明授权
US07875535B2 Compound semiconductor device using SiC substrate and its manufacture
有权
使用SiC衬底的复合半导体器件及其制造
- 专利标题： Compound semiconductor device using SiC substrate and its manufacture
- 专利标题（中）： 使用SiC衬底的复合半导体器件及其制造
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申请号： US12359747申请日： 2009-01-26
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公开(公告)号： US07875535B2公开(公告)日： 2011-01-25
- 发明人: Toshihide Kikkawa , Kenji Imanishi
- 申请人： Toshihide Kikkawa , Kenji Imanishi
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.
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