Invention Grant
- Patent Title: Method for plasma processing over wide pressure range
- Patent Title (中): 在宽压力范围内进行等离子体处理的方法
-
Application No.: US11947038Application Date: 2007-11-29
-
Publication No.: US07875555B2Publication Date: 2011-01-25
- Inventor: Lee Chen , Merritt Funk
- Applicant: Lee Chen , Merritt Funk
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for treating a substrate with plasma over a wide pressure range is described. The method comprises exposing the substrate to a low pressure plasma in a process chamber. Further, the method comprises exposing the substrate to a high pressure plasma in the process chamber.
Public/Granted literature
- US20090142929A1 Method for plasma processing over wide pressure range Public/Granted day:2009-06-04
Information query
IPC分类:
