Invention Grant
- Patent Title: Method of inspecting pattern and inspecting instrument
- Patent Title (中): 检查模式和检验仪器的方法
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Application No.: US12007911Application Date: 2008-01-17
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Publication No.: US07876113B2Publication Date: 2011-01-25
- Inventor: Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
- Applicant: Mari Nozoe , Mitsuo Suga , Yoichiro Neo , Hidetoshi Nishiyama
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, P.C.
- Priority: JP2000-187517 20000619
- Main IPC: G01R31/305
- IPC: G01R31/305

Abstract:
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
Public/Granted literature
- US20080122462A1 Method of inspecting pattern and inspecting instrument Public/Granted day:2008-05-29
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