发明授权
US07876612B2 Method for reducing leakage current of a memory and related device
有权
减少存储器及相关设备泄漏电流的方法
- 专利标题： Method for reducing leakage current of a memory and related device
- 专利标题（中）： 减少存储器及相关设备泄漏电流的方法
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申请号： US12247235申请日： 2008-10-08
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公开(公告)号： US07876612B2公开(公告)日： 2011-01-25
- 发明人: Richard Michael Parent
- 申请人： Richard Michael Parent
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method for reducing leakage current of a memory device includes supplying a first voltage to a main wordline driver, supplying a second voltage greater than the first voltage to a local wordline driver, and employing a transistor in the local wordline driver with a threshold voltage greater than a specific value.