Invention Grant
US07879637B2 CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device
有权
CMOS固态成像器件及其制造方法以及CMOS固态成像器件的驱动方法
- Patent Title: CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device
- Patent Title (中): CMOS固态成像器件及其制造方法以及CMOS固态成像器件的驱动方法
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Application No.: US12334015Application Date: 2008-12-12
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Publication No.: US07879637B2Publication Date: 2011-02-01
- Inventor: Hideshi Abe , Keiji Tatani , Kazuichiro Itonaga
- Applicant: Hideshi Abe , Keiji Tatani , Kazuichiro Itonaga
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2004-275461 20040922
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/77
Abstract:
A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels are separated by an element isolation portion formed of a diffusion layer and an insulating layer thereon, and the insulating layer of the element isolation portion is formed in a position equal to or shallower than the position of a pn junction on the side of an accumulation layer of a photoelectric conversion portion 38 constituting a pixel.
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