发明授权
- 专利标题： Semiconductor resistor formed in metal gate stack
- 专利标题（中）： 半导体电阻器形成在金属栅极堆叠中
-
申请号： US12177986申请日： 2008-07-23
-
公开(公告)号： US07879666B2公开(公告)日： 2011-02-01
- 发明人: Da Zhang , Chendong Zhu , Xiangdong Chen , Melanie Sherony
- 申请人： Da Zhang , Chendong Zhu , Xiangdong Chen , Melanie Sherony
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Hamilton & Terrile, LLP
- 代理商 Michael Rocco Cannatti
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
A semiconductor process and apparatus fabricate a metal gate electrode (30) and an integrated semiconductor resistor (32) by forming a metal-based layer (26) and semiconductor layer (28) over a gate dielectric layer (24) and then selectively implanting the resistor semiconductor layer (28) in a resistor area (97) to create a conductive upper region (46) and a conduction barrier (47), thereby confining current flow in the resistor semiconductor layer (36) to only the top region (46) in the finally formed device.
公开/授权文献
- US20100019328A1 Semiconductor Resistor Formed in Metal Gate Stack 公开/授权日：2010-01-28