发明授权
US07879676B2 High density trench mosfet with single mask pre-defined gate and contact trenches
有权
高密度沟槽mosfet与单一掩模预定义的门和接触沟槽
- 专利标题: High density trench mosfet with single mask pre-defined gate and contact trenches
- 专利标题(中): 高密度沟槽mosfet与单一掩模预定义的门和接触沟槽
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申请号: US12847863申请日: 2010-07-30
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公开(公告)号: US07879676B2公开(公告)日: 2011-02-01
- 发明人: Yeeheng Lee , Hong Chang , Tiesheng Li , John Chen , Anup Bhalla
- 申请人: Yeeheng Lee , Hong Chang , Tiesheng Li , John Chen , Anup Bhalla
- 申请人地址: US CA Sunnyvale
- 专利权人: Alpha & Omega Semiconductor Incorporated
- 当前专利权人: Alpha & Omega Semiconductor Incorporated
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: JDI Patent
- 代理商 Joshua D. Isenberg
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
Trench gate MOSFET devices may be formed using a single mask to define gate trenches and body contact trenches. A hard mask is formed on a surface of a semiconductor substrate. A trench mask is applied on the hard mask to predefine a body contact trench and a gate trench. These predefined trenches are simultaneously etched into the substrate to a first predetermined depth. A gate trench mask is next applied on top of the hard mask. The gate trench mask covers the body contact trenches and has openings at the gate trenches. The gate trench, but not the body contact trench, is etched to a second predetermined depth. Conductive material of a first kind may fill the gate trench to form a gate. Conductive material of a second kind may fill the body contact trench to form a body contact.