发明授权
US07879739B2 Thin transition layer between a group III-V substrate and a high-k gate dielectric layer
有权
III-V族衬底和高k栅介质层之间的薄过渡层
- 专利标题: Thin transition layer between a group III-V substrate and a high-k gate dielectric layer
- 专利标题(中): III-V族衬底和高k栅介质层之间的薄过渡层
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申请号: US11382428申请日: 2006-05-09
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公开(公告)号: US07879739B2公开(公告)日: 2011-02-01
- 发明人: Willy Rachmady , James Blackwell , Suman Datta , Jack T. Kavalieros , Mantu K. Hudait
- 申请人: Willy Rachmady , James Blackwell , Suman Datta , Jack T. Kavalieros , Mantu K. Hudait
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/469
摘要:
Embodiments of the invention provide a method to form a high-k dielectric layer on a group III-V substrate with substantially no oxide of the group III-V substrate between the substrate and high-k dielectric layer. Oxide may be removed from the substrate. An organometallic compound may form a capping layer on the substrate from which the oxide was removed. The high-k dielectric layer may then be formed, resulting in a thin transition layer between the substrate and high-k dielectric layer and substantially no oxide of the group III-V substrate between the substrate and high-k dielectric layer.