发明授权
- 专利标题： Field emission electron source and method for making the same
- 专利标题（中）： 场致发射电子源及其制作方法
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申请号： US11603672申请日： 2006-11-21
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公开(公告)号： US07880373B2公开(公告)日： 2011-02-01
- 发明人: Li Qian , Liang Liu , Peng Liu , Jie Tang , Yang Wei , Shou-Shan Fan
- 申请人： Li Qian , Liang Liu , Peng Liu , Jie Tang , Yang Wei , Shou-Shan Fan
- 申请人地址： CN Beijing TW Tu-Cheng, Taipei Hsien
- 专利权人： Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人： Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址： CN Beijing TW Tu-Cheng, Taipei Hsien
- 代理商 Jeffrey T. Knapp
- 优先权： CN200610060128 20060331
- 主分类号： H01J1/304
- IPC分类号： H01J1/304
摘要：
A field emission electron source includes at least one electron emission member. Each electron emission member includes a conductive body and an electron emission layer formed on the conductive body. The conductive body has an upper portion. The electron emission layer is formed on, at least, the upper portion of the conductive body. The electron emission layer includes a glass matrix; and at least one carbon nanotube, and a plurality of metallic conductive particles and getter powders dispersed in the glass matrix. A method for making such field emission electron source is also provided.
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