利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

305 条记录 (耗时 0.038 秒)

    Method for making marco-scale carbon nanotube tube structure
    2.
    发明授权
    Method for making marco-scale carbon nanotube tube structure 有权
    制造丸型碳纳米管管结构的方法

    公开(公告)号：US09523162B2

    公开(公告)日：2016-12-20

    申请号：US13046955

    申请日：2011-03-14

    申请人： Yang Wei ,  Shou-Shan Fan

    发明人： Yang Wei ,  Shou-Shan Fan

    IPC分类号： D01F9/12 ,  C01B31/02 ,  D01D5/24

    CPC分类号： D01F9/12 ,  C01B32/16 ,  D01D5/24 ,  Y10T428/2918 ,  Y10T428/292

    摘要： A method for making a macro-scale carbon nanotube tube structure includes the following steps. A linear structure and a carbon nanotube structure are provided. The carbon nanotube structure includes at least one carbon nanotube film or at least one carbon nanotube wire. The carbon nanotube structure is wrapped around the linear structure to form a carbon nanotube composite structure. The linear structure is removed from the carbon nanotube composite structure, thereby forming the macro-scale carbon nanotube tube structure.

    摘要翻译： 制备大规模碳纳米管管结构的方法包括以下步骤。 提供线性结构和碳纳米管结构。 碳纳米管结构包括至少一个碳纳米管膜或至少一个碳纳米管线。 碳纳米管结构缠绕在线性结构上以形成碳纳米管复合结构。 从碳纳米管复合结构体去除线状结构，形成大规模碳纳米管管结构。

    Field emission device and field emission display having same
    4.
    发明授权
    Field emission device and field emission display having same 有权
    场发射器件和场发射显示器具有相同的

    公开(公告)号：US09000662B2

    公开(公告)日：2015-04-07

    申请号：US13630255

    申请日：2012-09-28

    申请人： Peng Liu ,  Shou-Shan Fan ,  Yang Wei

    发明人： Peng Liu ,  Shou-Shan Fan ,  Yang Wei

    IPC分类号： H05B33/02 ,  H01J3/02 ,  H01J29/46 ,  H01J31/12

    CPC分类号： H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J2329/463

    摘要： A field emission device includes a cathode and a carbon nanotube (CNT) gate electrode. The CNT gate electrode which is electrically insulated from the cathode includes a CNT layer and a dielectric layer. The CNT layer which has a surface includes a number of micropores. The dielectric layer is coated on the surface of the CNT layer and an inner wall of each of the micropores.

    摘要翻译： 场致发射器件包括阴极和碳纳米管（CNT）栅电极。 与阴极电绝缘的CNT栅极包括CNT层和电介质层。 具有表面的CNT层包括多个微孔。 介电层被涂覆在CNT层的表面和每个微孔的内壁上。

    Field emission electron source and field emission device using the same
    6.
    发明授权
    Field emission electron source and field emission device using the same 有权
    场致发射电子源和场致发射装置使用

    公开(公告)号：US08907555B2

    公开(公告)日：2014-12-09

    申请号：US13592795

    申请日：2012-08-23

    申请人： Yang Wei ,  Shou-Shan Fan

    发明人： Yang Wei ,  Shou-Shan Fan

    IPC分类号： H01J19/24 ,  H01J19/06

    CPC分类号： H01J1/304 ,  H01J1/14 ,  H01J1/16 ,  H01J29/04 ,  H01J31/123 ,  H01J2201/30469

    摘要： A field emission electron source includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. A field emission device is also disclosed.

    摘要翻译： 场发射电子源包括碳纳米管微尖端结构。 碳纳米管微尖端结构包括绝缘基板和图案化碳纳米管薄膜结构。 绝缘基板包括表面。 表面包括边缘。 图案化的碳纳米管膜结构部分地布置在绝缘基板的表面上。 图案化碳纳米管膜结构包括两端连接的带状臂，形成从绝缘基板的表面的边缘突出的顶端部分并悬挂。 两个条形臂中的每一个包括平行于绝缘基板的表面的多个碳纳米管。 还公开了一种场致发射器件。

    Elastic device using carbon nanotube film
    7.
    发明授权
    Elastic device using carbon nanotube film 有权
    使用碳纳米管膜的弹性装置

    公开(公告)号：US08900709B2

    公开(公告)日：2014-12-02

    申请号：US13450740

    申请日：2012-04-19

    申请人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

    发明人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

    IPC分类号： B32B9/00 ,  B82Y30/00 ,  B82Y10/00 ,  G06F3/045

    CPC分类号： G06F3/045 ,  B82Y10/00 ,  B82Y30/00 ,  Y10T428/30

    摘要： An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. The carbon nanotube film includes a plurality of carbon nanotube strings separately arranged, located side by side and extending substantially along a first direction from the first side to the second side and one or more carbon nanotubes located between adjacent carbon nanotube strings. The carbon nanotube film is capable of elastic deformation along a second direction that is substantially perpendicular to the first direction.

    摘要翻译： 弹性装置包括第一弹性支撑件; 第二弹性支撑体和碳纳米管膜。 第二弹性支撑件与第一弹性支撑件间隔开。 碳纳米管膜具有固定在第一弹性支撑体上的第一侧和与第一侧相反的第二侧并且固定在第二弹性支撑体上。 碳纳米管膜包括多个并排布置并且基本上沿着从第一侧到第二侧的第一方向延伸并且位于相邻碳纳米管串之间的一个或多个碳纳米管的碳纳米管柱。 碳纳米管膜能够沿着与第一方向基本垂直的第二方向弹性变形。

    Carbon nanotube based micro-tip structure and method for making the same
    8.
    发明授权
    Carbon nanotube based micro-tip structure and method for making the same 有权
    基于碳纳米管的微尖端结构及其制造方法

    公开(公告)号：US08821675B2

    公开(公告)日：2014-09-02

    申请号：US13592763

    申请日：2012-08-23

    申请人： Yang Wei ,  Shou-Shan Fan

    发明人： Yang Wei ,  Shou-Shan Fan

    IPC分类号： B32B38/00

    CPC分类号： B81C1/0015 ,  B81B2201/12 ,  G01Q70/12 ,  H01J1/304 ,  H01J9/025 ,  H01J37/073 ,  H01J2201/30469 ,  Y10T156/1052 ,  Y10T156/1064 ,  Y10T156/1077 ,  Y10T156/1082

    摘要： A method for making a carbon nanotube micro-tip structure is disclosed. A carbon nanotube film structure and an insulting substrate are provided. The insulating substrate includes a surface. At least one strip-shaped recess is defined at the surface. The carbon nanotube film structure is covered on the surface of the insulating substrate, and has a suspended portion covered on the at least one strip-shaped recess. The suspended portion of the carbon nanotube film structure is laser etched, to define a first hollow pattern in the suspended portion and form a patterned carbon nanotube film structure according to the first hollow pattern. The patterned carbon nanotube film structure includes two strip-shaped arms. The two strip-shaped arms are joined at one end to form a tip portion. The tip portion is suspended above the strip-shaped recess.

    摘要翻译： 公开了一种制造碳纳米管微尖端结构的方法。 提供碳纳米管膜结构和绝缘基板。 绝缘基板包括表面。 在表面上限定至少一个条状凹槽。 碳纳米管膜结构覆盖在绝缘基板的表面上，并且具有覆盖在至少一个带状凹部上的悬置部分。 激光蚀刻碳纳米管膜结构的悬浮部分，以在悬浮部分中限定第一中空图案，并根据第一中空图案形成图案化的碳纳米管薄膜结构。 图案化碳纳米管薄膜结构包括两个带状臂。 两个带状臂在一端连接以形成尖端部分。 尖端部分悬挂在条状凹槽的上方。

    Method for manufacturing a one-dimensional nano-structure-based device
    9.
    发明授权
    Method for manufacturing a one-dimensional nano-structure-based device 有权
    制造一维纳米结构的装置的方法

    公开(公告)号：US08795495B2

    公开(公告)日：2014-08-05

    申请号：US11371877

    申请日：2006-03-08

    申请人： Yang Wei ,  Shou-Shan Fan

    发明人： Yang Wei ,  Shou-Shan Fan

    IPC分类号： C25D13/02

    CPC分类号： G01Q70/12 ,  B82B3/00 ,  H01L51/0595 ,  H01L51/102

    摘要： A method for manufacturing a one-dimensional nano-structure-based device includes the steps of preparing a solution (14) containing one-dimensional nano-structures (18); providing a plurality of electrical conductors (42), each of the electrical conductors having a first tip (421) to be treated; providing a fixing device (44) having a second tip (441); connecting at least one of the one-dimensional nano-structures with one of the electrical conductors; and repeating the connecting step to another one of the first tips to be treated. Therein, the connecting step further includes the steps of, in part: applying at least a drop of the solution to the first and second tips thereby the first and second tips being interconnected by the solution; applying a voltage between the first and second tips thereby at least one one-dimensional nano-structures being interconnected therewith; and separating the second tip from the first tip.

    摘要翻译： 制造一维纳米结构的器件的方法包括制备含有一维纳米结构（18）的溶液（14）的步骤。 提供多个电导体（42），每个电导体具有待处理的第一尖端（421）; 提供具有第二尖端（441）的固定装置（44）; 将所述一维纳米结构中的至少一个与所述电导体之一连接; 并且将连接步骤重复到待处理的第一尖端中的另一个。 其中，连接步骤还包括以下步骤：部分地将至少一滴溶液施加到第一和第二末端，由此第一和第二末端通过溶液互连; 在所述第一和第二尖端之间施加电压，由此至少一个一维纳米结构与其互连; 以及将所述第二尖端与所述第一尖端分离。

    Light emitting diode
    10.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08779458B2

    公开(公告)日：2014-07-15

    申请号：US13288180

    申请日：2011-11-03

    申请人： Yang Wei ,  Shou-Shan Fan

    发明人： Yang Wei ,  Shou-Shan Fan

    IPC分类号： H01L33/62 ,  B82Y99/00

    CPC分类号： H01L33/36 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/02 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/40 ,  H01L33/641 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, an upper electrode, and a lower electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer. The lower electrode is electrical connected with the first semiconductor layer, and the upper electrode is electrical connected with the second semiconductor layer. A surface of the second semiconductor layer away from the active layer is used as the light extraction surface. A surface of the first semiconductor layer connected with the lower electrode is a patterned surface comprising a plurality of grooves.

    摘要翻译： 发光二极管包括第一半导体层，有源层，第二半导体层，上电极和下电极。 有源层夹在第一半导体层和第二半导体层之间。 下电极与第一半导体层电连接，上电极与第二半导体层电连接。 离开有源层的第二半导体层的表面被用作光提取表面。 与下电极连接的第一半导体层的表面是包括多个沟槽的图案化表面。